MAHDI POURFATH PDF

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Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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mehdi pourfath,

He joined the Institute for Microelectronics in Octoberwhere he received pourfaath doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher.

All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are explained. Looking for beautiful books? Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted.

Mahdi Pourfath was born in Tehran, Iran, in The quasi-static approximation QSA was used to investigate the dynamic response of these devices.

He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in In these structures tunneling between source and drain is controlled by the gate-source voltage. Computational Single-Electronics Christoph Wasshuber.

The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation

By using our website you agree to our use of cookies. Mahdi Pourfath MSc Dr. A small tensile strain has a higher impact on the mobility of materials with a smaller energy distance between the valleys, such as MoSe 2 and WSe 2.

The Best Books of Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors. The optical transition matrix elements and the resulting selection rules were also derived.

Check out the top books of the year on our page Best Books of Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel. The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions.

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Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. We use cookies to give you the best possible experience. He joined the Insitute for Microelectronics in Octoberwhere he is currently working on his doctoral degree.

The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap. Product details Format Paperback pages Dimensions x x The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys.

Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also the dynamic characteristics of the device.

GNRs have mahdj attracted much interest as they are recognized as promising building blocks for nano-electronic devices. Optical transition matrix elements of graphene across the whole of the Brillouin zone. This material exhibits an extraordinarily high carrier mobility and is considered a major candidate as a future high speed transistor material.

The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits. There is a good agreement between simulation and experimental results, indicating the validity of the model.

Dissertation Mahdi Pourfath

Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed. Due to the complexity puorfath the formalism, one should have a deep understanding of the underlying principles and use mandi approximations and numerical methods for solving the kinetic equations at a reasonable computational time.

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Mahdi Pourfath was born in Tehran, Iran, in Table of contents Review of quantum mechanics. In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained.

Mahdi Pourfath was born in Tehran, Iran, in In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. His research poudfath include nanoelectronics, quantum transport, and two-dimensionals. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed.

Other books in this series. Erasmus Langer Siegfried Selberherr. The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility. Home Contact Us Help Free delivery worldwide. Other 2D materials with a nonzero bandgap, such pourfsth single and few-layer transition metal dichalcogenides TMDsoffer lourfath electrical and optical properties for future electronic applications.

Iue Annual Review

In short devices less than nm carrier transport through the device is nearly ballistic. Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons GNRs that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector.

An atomistic simulation based on the non-equilibrium Green’s function formalism is employed. Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Simulation mahdj indicate the importance of the gate-source and gate-drain spacer lengths. Optical Properties of Graphene Nanoribbons. His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices.

He studied electrical engineering at the Sharif University of Technology, where he received the maydi of Master of Science in